Questionbanks  EDCI (EXTC) 
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MODULE1 1. Explain various types of capacitors. 2. Explain the effect of temperature of on VI characteristic of a PN junction diode. 3. For the circuit shown in figure 1 draw the output waveform. Assume diode is ideal. (Given Circuit) 4. Explain the fabrication steps of passive elements. MODULE2 1. Explain Zener as voltage regulator. 2. Short note on Different types of filters. 3. Design an L section LC filter with full wave rectifier to meet the following specifications : (Given any Value) to the resistive load and the required ripple factor is 0.04. MODULE3 1. For the circuit given below the transistor parameters are (Given any value) Calculate (Given any Value). (Given Circuit) 2. For the circuit shown, determine RE such that emitter current is limited to (Given any Value). (Given Circuit) 3. Prove that for a JFET the gatesource bias for zero temperature drift of drain current is at V1=0.6 volts. 4. Consider a BJT has parameters (Given any Value). Calculate bandwidth of fs and capacitance Cpi of a BJT. 5. Short note on Stability factor of biasing circuit. 6. What are the important parameters of a JFET? How these parameters are determined graphically? 7. What is Early effect? Explain how it affects the BJT characteristics in CB configuration. 8. For the FET shown in figure 2, the drain current equation is (Given any Value), Determine (Given any Value) (Given Circuit) 9. Explain DC load line concept in BJT. Why Q point be at the middle of DC load line and fixed? 10. Explain concept of zero temperature drift in JFET. 11. Short note on JFET parameters. 12. Find (Given any Value) for the circuit shown in figure if (Given any Value). (Given Circuit) 13. In the common emitter configuration with voltage divider bias (Given any Value). Determine the values of (Given any Value) such that stability factor does not exceed 5. Assume (Given any Value). 14. Draw JFET CS amplifier with voltage divider bias and derive the expression for the voltage gain, input impedance and output impedance. 15. Determine (Given any Value) for the circuit given in figure. (Given Circuit) 16. For the circuit shown below in Fig.4(b), the transistor parameters are (Given any Value) i) Derive the expression for lower cutoff frequency (or time constant) due to input coupling capacitor. ii) Determine lower cutoff frequency and midband voltage gain. (Given Circuit) 17. For the circuit using JFET as shown in Fig.5(a), if (Given any Value), Determine i) (Given any Value) ii) (Given any Value) , iii)(Given any Value), and iv) (Given any Value). (Given Circuit) 18. Design a voltage divider bias network using a supply of 24 Volts, a transistor with beta =110 and an operating point (Given any Value) assume (Given any Value). 19. Draw CS JFET amplifier with self bias circuit and derive the expression for voltage gain input Impedance and output impedance. 20. For circuit shown below , the transistors parameters are(Given any Value) i) Derive the expression for lower cutoff frequency ( or time constant) due to input coupling capacitor. ii) Determine lower cutoff frequency and midband voltage gain. (Given Circuit) MODULE4 1. Draw a neat circuit diagram of emitter follower configuration and its hybrid π model. 2. Short note on Hybrid Parameters 3. Short note on Comparison of BJT CE and JFET CS amplifier. 4. Determine the following for the network given below i) QPoint ii) Av,Ai,Zi,Zo. (Given Circuit) 5. For the circuit in fig let(Given any Value). Determine i) Small signal voltage gain ii) Input resistance seen by the signal source iii) output resistance. (Given Circuit) 6. For the amplifier circuit shown below i) Determine the values of Kp such that (Given any Value) ii) Determine the resulting value of (Given any Value) and small signal voltage gain. (Given Circuit) 7. Draw input and output characteristics of CE amplifier. Explain graphical analysis to determine parameters.(Given any Value). 8. For the amplifier shown in fig 4 analyze and determine i) SmallSignal hybrid pi parameters of BJT. ii) SmallSignal voltage gain iii) Input and output impedance. The circuit parameters are: (Given any Value). And BJT parameters are (Given any Value) (Given Circuit) 9. Draw small signal hybrid parameter equivalent circuit for CE amplifier and define the same. What are the advantages of h parameters? 10. For the circuit shown below in fig 5.(b), the transistor parameters are (Given any Value), Determine (Given any Value). (Given Circuit) MODULE5 1. State and explain Miller’s Theorem. 2. Short note on High frequency π equivalent model of common emitter BJT. MODULE6 1. Why should collector resistor Rc be as a large as possible in the design of CE amplifier? 2. Design the resistors of a single stage CS amplifier for audio frequency with BFW1 1 with (Given any Value) 
